s m d ty p e w w w . k e x i n . c o m . c n 1 d i o d e s sc hottk y diode s ss3 2 thru ss3 1 0 feat ur es f or s ur fac e m ounted appl i c ati ons . low pr ofi l e pac k age. metal s i l i c on j unc ti on, m aj or i ty c ar r i er c onduc ti on. low pow er l os s , hi gh effi c i enc y . hi gh c ur r ent c apabi l i ty , l ow for w ar d v ol tage dr op. hi gh s ur ge c apabi l i ty . 2.108 2.348 1 2 4.699 4.064 5.588 5.080 3.937 3.302 2.108 1.905 4.12 3.92 2.65 2.45 5.59 5.39 2.10 2.30 1.270 0.762 0.203 0.051 0.305 0.152 recommended land pattern do-214aa(smb) unit: mm a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol s s 32 s s 33 s s 34 s s 35 s s 36 s s 38 s s 39 s s 310 uni t m ax i m um r epeti ti v e peak r ev er s e v ol tage v r r m 20 30 40 50 60 80 90 100 m ax i m um rm s v ol tage v r m s 14 21 28 35 42 56 63 70 m ax i m um dc bl oc k i ng v ol tage v d c 20 30 40 50 60 80 90 100 m ax i m um av er age for w ar d r ec ti fi ed c ur r ent i a v p eak for w ar d s ur ge c ur r ent i fs m m ax i m um i ns tantaneous for w ar d v ol tage * 1 v f v m ax i m um i ns tantaneous r ev er s e t a = 25 * 1 c ur r ent at r ated dc bl oc k i ng v ol tage t a = 70 * 1 t her m al res i s tanc e j unc ti on to a m bi ent * 3 r ja /w j unc ti on t em per atur e t j s tor age tem per atur e r ange t st g 55 - 65 to 150 0.7 0.85 0.5 20 i r v a m a pf 3 70 0.55 * 1 *2. measured at 1mhz and applied reverse voltage of 4.0v d.c. . p ul s e tes t: 300 s pul s e w i dth, 1% duty c y c l e. * 3. p.c.b. mounted with 0.2x0.2?(5.0x5.0mm) copper pad areas. 10 - 65 to 125 - 65 to 150 t ypical junction capacitance *2 c j 500 300
s m d ty p e w w w . k exi n . co m . c n 2 dio d e s sc hottk y diode s ss3 2 thru ss3 1 0 ty pic al c har ac t er is it ic s 3.0 2.4 1.8 1.2 0.6 0 0 25 50 75 100 125 150 175 0.1 1.0 10 100 0.01 0.1 1 10 100 100 10 1 0.1 reverse vo lt age,vol ts t,pulse dura tion,sec. fig. 5-typical junction cap acit ance fig. 6 -typi ca l t ran sie n t t h e r m a l impe danc e number of cycles a t 60 hz fig. 2-maximum non-repetitive peak for w ard surge current fig. 1- for w ard current dera ting cur ve a verage for w ard rectified curren t , amperes junction cap acit ance, pf peak for w ard surge current , amperes 10 100 1000 2000 0 20 40 60 80 100 1,000 100 10 1 0.1 0.01 tj=75 c tj=25 c tj=100 c percent of peak reverse vo lt age,% fig. 4-typical reverse characteristics inst ant aneous reverse current , milliamperes transient thermal impedance, c/w ambient tempera ture, c ss32-ss34 ss35-SS310 single phase half w ave 60hz resistive or inductive load 50 10.0 1 0.1 0.01 fig. 3-typical inst ant aneous for w ard characteristics inst ant aneous for w ard current ,amperes inst ant aneous for w ard voleage, vol ts ss32-ss34 ss35-ss36 ss38-SS310 t j =25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j =25 c ss32-ss34 ss35-SS310 100 80 60 40 20 0 1 10 100 8.3ms single half sine-w a ve (jedec method)
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